Search results for "in situ surface analysis"
showing 1 items of 1 documents
Initial stages of metal oxides thin films growth by MOCVD: physicochemical characterisation of the film/substrate interface
2006
The initial stages of Metalorganic Chemical Vapour Deposition (MOCVD) of TiO2 thin films on Si(100) were studied in situ by surface analyses (XPS, ARXPS, AES). An original experimental set-up was built for this purpose and developed. Information obtained from these in situ experiments was completed by ex situ characterisations (HRTEM, SIMS, GIXRD...).The formation of an interfacial SiOy<2 layer resulting of the interaction of the precursor Ti(OCH(CH3)2)4 with the substrate takes place before the formation of stoichiometric TiO2 and leads to the presence of carbon at the interface. At the deposition temperature, 675 °C, silicon diffusion within the TiO2 external layer was also revealed. Conc…